K4M281633F-RL1L
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明Synchronous DRAM, 8MX16, 7ns, CMOS, PBGA54
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeS-PBGA-B54
- Memory Width16
- Organization8MX16
- Package CodeFBGA
- JESD-609 Codee0
- Package ShapeSQUARE
- Package StyleGRID ARRAY, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density134217728 bit
- Memory IC TypeSYNCHRONOUS DRAM
- Refresh Cycles4096
- Terminal Pitch0.8 mm
- Access Time-Max7 ns
- Number of Words8388608 words
- Terminal FinishTin/Lead (Sn/Pb)
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Supply Current-Max155 mA
- Number of Terminals54
- Standby Current-Max0.0005 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Sequential Burst Length1,2,4,8,FP
- Interleaved Burst Length1,2,4,8
- Package Equivalence CodeBGA54,9X9,32
- Operating Temperature-Max70 Cel
- Operating Temperature-Min-25 Cel
- Clock Frequency-Max (fCLK)105 MHz
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K4M281633F-RL1L