K4J55323QG-AC120
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- REACHREACH compliant
- 说明GDDR3 DRAM, 8MX32, 0.23ns, CMOS, PBGA136
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- Width11 mm
- Length14 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B136
- Memory Width32
- Organization8MX32
- Package CodeTFBGA
- Self RefreshYES
- JESD-609 Codee0
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeGDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Access Time-Max0.23 ns
- Number of Ports1
- Number of Words8388608 words
- Terminal FinishTIN LEAD
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals136
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.9 V
- Supply Voltage-Min (Vsup)1.7 V
- Supply Voltage-Nom (Vsup)1.8 V
K4J55323QG-AC120有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
K4J55323QG-AC120
提交询价
K4J55323QG-AC120