K4J55323QF-VC140
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明GDDR3 DRAM, 8MX32, CMOS, PBGA144
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.24
- SB Code8542.32.00.15
- Width12 mm
- Length12 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeS-PBGA-B144
- Memory Width32
- Organization8MX32
- Package CodeLFBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeSQUARE
- Package StyleGRID ARRAY, LOW PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density268435456 bit
- Memory IC TypeGDDR3 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words8388608 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.4 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals144
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.1 V
- Supply Voltage-Min (Vsup)1.9 V
- Supply Voltage-Nom (Vsup)2 V
- Moisture Sensitivity Level2
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