Samsung Semiconductor, Inc. K4H510838B-VLA20 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4H510838B-VLA20

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR1 DRAM, 64MX8, 0.75ns, CMOS, PDSO54
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

Width
10.16 mm
Length
11.2 mm
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PDSO-G54
Memory Width
8
Organization
64MX8
Package Code
TSSOP
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.4 mm
Access Time-Max
0.75 ns
Number of Ports
1
Number of Words
67108864 words
Seated Height-Max
1.2 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Number of Functions
1
Number of Terminals
54
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.7 V
Supply Voltage-Min (Vsup)
2.3 V
Supply Voltage-Nom (Vsup)
2.5 V
Moisture Sensitivity Level
2