Samsung Semiconductor, Inc. K4H510438G-LCB30 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4H510438G-LCB30

生命周期状态
Discontinued
RoHS
符合RoHS标准
说明
DDR1 DRAM, 128MX4, 0.7ns, CMOS, PDSO66
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G66
Memory Width
4
Organization
128MX4
Package Code
TSSOP
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
536870912 bit
Memory IC Type
DDR1 DRAM
Refresh Cycles
8192
Terminal Pitch
0.635 mm
Access Time-Max
0.7 ns
Number of Words
134217728 words
Terminal Finish
TIN BISMUTH
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
210 mA
Number of Terminals
66
Standby Current-Max
0.005 Amp
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
TSSOP66,.46
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
166 MHz
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260