K4H510438B-ZCCC0
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明DDR1 DRAM, 128MX4, 0.65ns, CMOS, PBGA60
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.28
- SB Code8542.32.00.15
- Width10 mm
- Length12 mm
- TechnologyCMOS
- Access ModeFOUR BANK PAGE BURST
- JESD-30 CodeR-PBGA-B60
- Memory Width4
- Organization128MX4
- Package CodeTBGA
- Self RefreshYES
- JESD-609 Codee1
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density536870912 bit
- Memory IC TypeDDR1 DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch1 mm
- Access Time-Max0.65 ns
- Number of Ports1
- Number of Words134217728 words
- Terminal FinishTIN SILVER COPPER
- Seated Height-Max1.2 mm
- Temperature GradeCOMMERCIAL
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals60
- Number of Words Code128M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)2.7 V
- Supply Voltage-Min (Vsup)2.5 V
- Supply Voltage-Nom (Vsup)2.6 V
- Moisture Sensitivity Level2
K4H510438B-ZCCC0有0家供应商货源可供购买或竞价
提交询价
提交询价 您的询价单将直接发送给我们的销售专家: Pari
提交询价
K4H510438B-ZCCC0
提交询价
K4H510438B-ZCCC0