Samsung Semiconductor, Inc. K4H1G0738C-UCB0T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4H1G0738C-UCB0T

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Cache DRAM Module, 128MX8, 0.75ns, CMOS, PDSO64
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G66
Memory Width
8
Organization
128MX8
Package Code
SSOP
JESD-609 Code
e3
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
1073741824 bit
Memory IC Type
CACHE DRAM MODULE
Refresh Cycles
8192
Terminal Pitch
0.635 mm
Access Time-Max
0.75 ns
Number of Words
134217728 words
Terminal Finish
MATTE TIN
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
370 mA
Number of Terminals
64
Standby Current-Max
0.01 Amp
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
SSOP66,.46
Operating Temperature-Max
70 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
133 MHz
Moisture Sensitivity Level
1