K4H1G0638B-UCA2
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- RoHS符合RoHS标准
- REACHREACH compliant
- 说明Cache DRAM Module, 256MX4, 0.75ns, CMOS, PDSO64
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.32
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G66
- Memory Width4
- Organization256MX4
- Package CodeSSOP
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, SHRINK PITCH Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density1073741824 bit
- Memory IC TypeCACHE DRAM MODULE
- Refresh Cycles8192
- Terminal Pitch0.635 mm
- Access Time-Max0.75 ns
- Number of Words268435456 words
- Temperature GradeCOMMERCIAL
- Terminal PositionDUAL
- Supply Current-Max390 mA
- Number of Terminals64
- Standby Current-Max0.01 Amp
- Number of Words Code256M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeSSOP66,.46
- Operating Temperature-Max70 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Nom (Vsup)2.5 V
- Clock Frequency-Max (fCLK)133 MHz
- Moisture Sensitivity Level3
- Peak Reflow Temperature (Cel)260
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K4H1G0638B-UCA2