Samsung Semiconductor, Inc. K4F8E304HB-MGCJ0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4F8E304HB-MGCJ0

生命周期状态
EOL
REACH
REACH compliant
说明
LPDDR4 DRAM, 256MX32, CMOS
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
JESD-30 Code
R-PBGA-B200
Memory Width
32
Organization
256MX32
Self Refresh
NO
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory Density
8589934592 bit
Memory IC Type
LPDDR4 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Number of Words
268435456 words
Temperature Grade
COMMERCIAL EXTENDED
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
200
Number of Words Code
256M
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-25 Cel
Supply Voltage-Nom (Vsup)
1.1 V