Samsung Semiconductor, Inc. K4F6E3D4HB-MFCJ0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4F6E3D4HB-MFCJ0

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
LPDDR4 DRAM, 512MX32, CMOS, PBGA200
类别
Semiconductors Memory ICs DRAMs LPDDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
JESD-30 Code
R-PBGA-B200
Memory Width
32
Organization
512MX32
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
17179869184 bit
Memory IC Type
LPDDR4 DRAM
Operating Mode
ASYNCHRONOUS
Number of Ports
1
Number of Words
536870912 words
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
200
Number of Words Code
512M
Package Body Material
PLASTIC/EPOXY