K4E661612E-TI450
Samsung Semiconductor, Inc.
- 生命周期状态Discontinued
- 说明EDO DRAM, 4MX16, 45ns, CMOS, PDSO50
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G50
- Memory Width16
- Organization4MX16
- Package CodeTSOP
- Self RefreshNO
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density67108864 bit
- Memory IC TypeEDO DRAM
- Refresh Cycles8192
- Terminal Pitch0.8 mm
- Access Time-Max45 ns
- Number of Words4194304 words
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max130 mA
- Number of Terminals50
- Standby Current-Max0.0005 Amp
- Number of Words Code4M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSOP50,.46,32
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)3.3 V
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K4E661612E-TI450