K4E660812E-TI500
Samsung Semiconductor, Inc.
- 生命周期状态Active-Unconfirmed
- REACHREACH compliant
- 说明EDO DRAM, 8MX8, 50ns, CMOS, PDSO32
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- JESD-30 CodeR-PDSO-G32
- Memory Width8
- Organization8MX8
- Package CodeTSOP
- Self RefreshNO
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory Density67108864 bit
- Memory IC TypeEDO DRAM
- Refresh Cycles8192
- Terminal Pitch1.27 mm
- Access Time-Max50 ns
- Number of Words8388608 words
- Temperature GradeINDUSTRIAL
- Terminal PositionDUAL
- Supply Current-Max110 mA
- Number of Terminals32
- Standby Current-Max0.001 Amp
- Number of Words Code8M
- Qualification StatusNot Qualified
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Package Equivalence CodeTSOP32,.46
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-40 Cel
- Supply Voltage-Nom (Vsup)3.3 V
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K4E660812E-TI500