K4E640812D-TI450
Samsung Semiconductor, Inc.
- 生命周期状态Active
- REACHREACH compliant
- 说明EDO DRAM, 8MX8, 45ns, CMOS, PDSO32
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.02
- SB Code8542.32.00.15
- I/O TypeCOMMON
- TechnologyCMOS
- Width (mm)10.16
- Access ModeFAST PAGE WITH EDO
- Length (mm)20.95
- JESD-30 CodeR-PDSO-G32
- Memory Width8
- Package CodeTSOP2
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleSMALL OUTLINE, THIN PROFILE Meter
- Surface MountYES
- Terminal FormGULL WING
- Memory IC TypeEDO DRAM
- Operating ModeASYNCHRONOUS
- Refresh Cycles4096
- Number of Ports1
- Terminal PositionDUAL
- Memory Organization8MX8
- Number of Functions1
- Number of Terminals32
- Terminal Pitch (mm)1.27
- Access Time-Max (ns)45
- Number of Words Code8M
- Memory Density (bits)67108864
- Package Body MaterialPLASTIC/EPOXY
- Output Characteristics3-STATE
- Seated Height-Max (mm)1.2
- Supply Voltage-Max (V)3.6
- Supply Voltage-Min (V)3
- Supply Voltage-Nom (V)3.3
- Number of Words (words)8388608
- Standby Current-Max (A)0.001
- Supply Current-Max (mA)120
- Package Equivalence CodeTSOP32,.46
- Operating Temperature-Max (Cel)85
- Operating Temperature-Min (Cel)-40
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K4E640812D-TI450