Samsung Semiconductor, Inc. K4E640412E-TI600 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4E640412E-TI600

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
EDO DRAM, 16MX4, 60ns, CMOS, PDSO32
类别
Semiconductors Memory ICs DRAMs EDO DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G32
Memory Width
4
Organization
16MX4
Package Code
TSOP
Self Refresh
NO
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
67108864 bit
Memory IC Type
EDO DRAM
Refresh Cycles
4096
Terminal Pitch
1.27 mm
Access Time-Max
60 ns
Number of Words
16777216 words
Temperature Grade
INDUSTRIAL
Terminal Position
DUAL
Supply Current-Max
100 mA
Number of Terminals
32
Standby Current-Max
0.0005 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Package Equivalence Code
TSOP32,.46
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Nom (Vsup)
3.3 V