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K4D553235F-GC250

Samsung Semiconductor, Inc.

K4D553235F-GC250 产品规格书
Samsung Semiconductor, Inc. K4D553235F-GC250
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • Width
    12 mm
  • Length
    12 mm
  • I/O Type
    COMMON
  • Technology
    CMOS
  • Access Mode
    FOUR BANK PAGE BURST
  • JESD-30 Code
    S-PBGA-B144
  • Memory Width
    32
  • Organization
    8MX32
  • Package Code
    LFBGA
  • Self Refresh
    YES
  • Package Shape
    SQUARE
  • Package Style
    GRID ARRAY, LOW PROFILE, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • Memory Density
    268435456 bit
  • Memory IC Type
    GDDR1 DRAM
  • Operating Mode
    SYNCHRONOUS
  • Refresh Cycles
    4096
  • Terminal Pitch
    0.8 mm
  • Access Time-Max
    0.45 ns
  • Number of Ports
    1
  • Number of Words
    8388608 words
  • Seated Height-Max
    1.4 mm
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    BOTTOM
  • Additional Feature
    AUTO/SELF REFRESH
  • Supply Current-Max
    368 mA
  • Number of Functions
    1
  • Number of Terminals
    144
  • Number of Words Code
    8M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    2,4,8
  • Interleaved Burst Length
    2,4,8
  • Package Equivalence Code
    BGA144,12X12,32
  • Operating Temperature-Max
    65 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Max (Vsup)
    1.9 V
  • Supply Voltage-Min (Vsup)
    1.7 V
  • Supply Voltage-Nom (Vsup)
    1.8 V
  • Clock Frequency-Max (fCLK)
    400 MHz
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED

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