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K4D551638F-TC36

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4D551638F-TC36
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.24
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PDSO-G66
  • Memory Width
    16
  • Organization
    16MX16
  • Package Code
    TSSOP
  • Package Shape
    RECTANGULAR
  • Package Style
    SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    GULL WING
  • Memory Density
    268435456 bit
  • Memory IC Type
    GDDR1 DRAM
  • Refresh Cycles
    8192
  • Terminal Pitch
    0.635 mm
  • Number of Words
    16777216 words
  • Temperature Grade
    COMMERCIAL
  • Terminal Position
    DUAL
  • Supply Current-Max
    515 mA
  • Number of Terminals
    66
  • Number of Words Code
    16M
  • Qualification Status
    Not Qualified
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Sequential Burst Length
    2,4,8
  • Interleaved Burst Length
    2,4,8
  • Package Equivalence Code
    TSSOP66,.46
  • Operating Temperature-Max
    65 Cel
  • Operating Temperature-Min
    0 Cel
  • Supply Voltage-Nom (Vsup)
    2.8 V
  • Clock Frequency-Max (fCLK)
    275 MHz
  • Moisture Sensitivity Level
    1

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