Samsung Semiconductor, Inc. K4D551638D-LC50T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4D551638D-LC50T

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
GDDR1 DRAM, 16MX16, 0.65ns, CMOS, PDSO66
类别
Semiconductors Memory ICs DRAMs GDDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.24
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PDSO-G66
Memory Width
16
Organization
16MX16
Package Code
TSSOP
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
268435456 bit
Memory IC Type
GDDR1 DRAM
Refresh Cycles
8192
Terminal Pitch
0.635 mm
Access Time-Max
0.65 ns
Number of Words
16777216 words
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Supply Current-Max
250 mA
Number of Terminals
66
Standby Current-Max
0.004 Amp
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
TSSOP66,.46
Operating Temperature-Max
65 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
2.6 V
Clock Frequency-Max (fCLK)
200 MHz