Samsung Semiconductor, Inc. K4D26323QG-GC330 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4D26323QG-GC330

生命周期状态
Discontinued
REACH
REACH compliant
说明
GDDR1 DRAM, 4MX32, 0.55ns, CMOS, PBGA144
类别
Semiconductors Memory ICs DRAMs GDDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
12 mm
Length
12 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
S-PBGA-B144
Memory Width
32
Organization
4MX32
Package Code
LFBGA
Self Refresh
YES
Package Shape
SQUARE
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
134217728 bit
Memory IC Type
GDDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Terminal Pitch
0.8 mm
Access Time-Max
0.55 ns
Number of Ports
1
Number of Words
4194304 words
Seated Height-Max
1.4 mm
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
410 mA
Number of Functions
1
Number of Terminals
144
Standby Current-Max
0.01 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA144,12X12,32
Operating Temperature-Max
65 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
1.9 V
Supply Voltage-Min (Vsup)
1.7 V
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
300 MHz
Peak Reflow Temperature (Cel)
240
Time@Peak Reflow Temperature-Max (s)
30