Samsung Semiconductor, Inc. K4D26323QG-GC2AT | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4D26323QG-GC2AT

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
GDDR1 DRAM, 4MX32, 0.55ns, CMOS, PBGA144
类别
Semiconductors Memory ICs DRAMs GDDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
S-PBGA-B144
Memory Width
32
Organization
4MX32
Package Code
FBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
134217728 bit
Memory IC Type
GDDR1 DRAM
Refresh Cycles
4096
Terminal Pitch
0.8 mm
Access Time-Max
0.55 ns
Number of Words
4194304 words
Temperature Grade
COMMERCIAL
Terminal Position
BOTTOM
Supply Current-Max
440 mA
Number of Terminals
144
Standby Current-Max
0.01 Amp
Number of Words Code
4M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
BGA144,12X12,32
Operating Temperature-Max
65 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
1.8 V
Clock Frequency-Max (fCLK)
350 MHz