Samsung Semiconductor, Inc. K4D261638I-LC400 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4D261638I-LC400

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
GDDR1 DRAM, 8MX16, 0.6ns, CMOS, PDSO66
类别
Semiconductors Memory ICs DRAMs GDDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.02
SB Code
8542.32.00.15

Width
10.16 mm
Length
22.22 mm
I/O Type
COMMON
Technology
CMOS
Access Mode
FOUR BANK PAGE BURST
JESD-30 Code
R-PDSO-G66
Memory Width
16
Organization
8MX16
Package Code
TSOP2
Self Refresh
YES
JESD-609 Code
e6
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE, THIN PROFILE Meter
Surface Mount
YES
Terminal Form
GULL WING
Memory Density
134217728 bit
Memory IC Type
GDDR1 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
4096
Terminal Pitch
0.65 mm
Access Time-Max
0.6 ns
Number of Ports
1
Number of Words
8388608 words
Terminal Finish
TIN BISMUTH
Seated Height-Max
1.2 mm
Temperature Grade
COMMERCIAL
Terminal Position
DUAL
Additional Feature
AUTO/SELF REFRESH
Supply Current-Max
390 mA
Number of Functions
1
Number of Terminals
66
Standby Current-Max
0.345 Amp
Number of Words Code
8M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4,8
Interleaved Burst Length
2,4,8
Package Equivalence Code
TSSOP66,.46
Operating Temperature-Max
65 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Max (Vsup)
2.625 V
Supply Voltage-Min (Vsup)
2.375 V
Supply Voltage-Nom (Vsup)
2.5 V
Clock Frequency-Max (fCLK)
250 MHz
Moisture Sensitivity Level
3