Samsung Semiconductor, Inc. K4C89183AF-AIF5 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4C89183AF-AIF5

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
DDR1 DRAM, 16MX18, 0.6ns, CMOS, PBGA60
类别
Semiconductors Memory ICs DRAMs DDR1 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B60
Memory Width
18
Organization
16MX18
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
301989888 bit
Memory IC Type
DDR1 DRAM
Terminal Pitch
1 mm
Access Time-Max
0.6 ns
Number of Words
16777216 words
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Supply Current-Max
400 mA
Number of Terminals
60
Number of Words Code
16M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
2,4
Interleaved Burst Length
2,4
Package Equivalence Code
BGA60,6X15,40
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Clock Frequency-Max (fCLK)
250 MHz