Samsung Semiconductor, Inc. K4B8G1646D-MMMA0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B8G1646D-MMMA0

生命周期状态
Discontinued
REACH
REACH compliant
说明
DDR3L DRAM, 512MX16, CMOS, PBGA96
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
7.5 mm
Length
13.3 mm
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-PBGA-B96
Memory Width
16
Organization
512MX16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
8589934592 bit
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.8 mm
Number of Ports
1
Number of Words
536870912 words
Seated Height-Max
1.2 mm
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH, ALSO OPERATES AT 1.5V SUPPLY
Number of Functions
1
Number of Terminals
96
Number of Words Code
512M
Package Body Material
PLASTIC/EPOXY
Operating Temperature-Max
85 Cel
Operating Temperature-Min
-40 Cel
Supply Voltage-Max (Vsup)
1.45 V
Supply Voltage-Min (Vsup)
1.283 V
Supply Voltage-Nom (Vsup)
1.35 V