K4B8G0446D-MYH90
Samsung Semiconductor, Inc.
- 生命周期状态Active-Unconfirmed
- REACHREACH compliant
- 说明DDR3L DRAM, 2GX4, CMOS, PBGA78
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- Width7.5 mm
- Length11 mm
- TechnologyCMOS
- Access ModeMULTI BANK PAGE BURST
- JESD-30 CodeR-PBGA-B78
- Memory Width4
- Organization2GX4
- Package CodeTFBGA
- Self RefreshYES
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY, THIN PROFILE, FINE PITCH Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density8589934592 bit
- Memory IC TypeDDR3L DRAM
- Operating ModeSYNCHRONOUS
- Terminal Pitch0.8 mm
- Number of Ports1
- Number of Words2147483648 words
- Seated Height-Max1.2 mm
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Additional FeatureAUTO/SELF REFRESH
- Number of Functions1
- Number of Terminals78
- Number of Words Code2G
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min0 Cel
- Supply Voltage-Max (Vsup)1.45 V
- Supply Voltage-Min (Vsup)1.283 V
- Supply Voltage-Nom (Vsup)1.35 V
K4B8G0446D-MYH90有0家供应商货源可供购买或竞价
提交询价
您的询价单将直接发送给我们的销售专家: Pari
提交询价
K4B8G0446D-MYH90