Samsung Semiconductor, Inc. K4B510846E-ZCG9 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B510846E-ZCG9

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM, 64MX8, 0.225ns, CMOS, PBGA82
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.28
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B82
Memory Width
8
Organization
64MX8
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
536870912 bit
Memory IC Type
DDR3 DRAM
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
0.225 ns
Number of Words
67108864 words
Temperature Grade
OTHER
Terminal Position
BOTTOM
Number of Terminals
82
Number of Words Code
64M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA82,11X13,32
Operating Temperature-Max
85 Cel
Operating Temperature-Min
0 Cel
Supply Voltage-Nom (Vsup)
1.5 V
Clock Frequency-Max (fCLK)
667 MHz