Samsung Semiconductor, Inc. K4B4G1646E-BMMA0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B4G1646E-BMMA0

生命周期状态
Discontinued
REACH
REACH compliant
说明
DDR3L DRAM, 256MX16, CMOS, PBGA96
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Width (mm)
7.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
13.3
JESD-30 Code
R-PBGA-B96
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3L DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; ALSO OPERATES AT 1.5V NOMINAL SUPPLY
Memory Organization
256MX16
Number of Functions
1
Number of Terminals
96
Terminal Pitch (mm)
0.8
Number of Words Code
256M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.45
Supply Voltage-Min (V)
1.283
Supply Voltage-Nom (V)
1.35
Number of Words (words)
268435456
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-40