Samsung Semiconductor, Inc. K4B4G1646B-HYK00 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B4G1646B-HYK00

生命周期状态
Active-Unconfirmed
REACH
REACH compliant
说明
DDR3 DRAM, 256MX16, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-PBGA-B78
Memory Width
16
Organization
256MX16
Package Code
BGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
4294967296 bit
Memory IC Type
DDR3 DRAM
Operating Mode
ASYNCHRONOUS
Number of Words
268435456 words
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
78
Number of Words Code
256M
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Nom (Vsup)
1.35 V