Samsung Semiconductor, Inc. K4B4G0846B-MCH9 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B4G0846B-MCH9

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM, 512MX8, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, LOW PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
J-STD-609 Code
e3
Memory IC Type
DDR3 DRAM
Refresh Cycles
8192
Terminal Finish
MATTE TIN
DLA Qualification
Not Qualified
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
512MX8
Number of Terminals
78
Terminal Pitch (mm)
0.8
Number of Words Code
512M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.425
Supply Voltage-Nom (V)
1.5
Number of Words (words)
536870912
Standby Current-Max (A)
0.024
Supply Current-Max (mA)
320
Package Equivalence Code
BGA78,9X13,32
Clock Frequency-Max (MHz)
667
Moisture Sensitivity Level
1
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0