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K4B1G1646D-HCF8T

Samsung Semiconductor, Inc.

Samsung Semiconductor, Inc. K4B1G1646D-HCF8T
  • ECCN
    EAR99
  • ECCN Governance
    EAR
  • HTS Code
    8542.32.00.32
  • SB Code
    8542.32.00.15
  • I/O Type
    COMMON
  • Technology
    CMOS
  • JESD-30 Code
    R-PBGA-B100
  • Memory Width
    16
  • Package Code
    FBGA
  • Package Shape
    RECTANGULAR
  • Package Style
    GRID ARRAY, FINE PITCH Meter
  • Surface Mount
    YES
  • Terminal Form
    BALL
  • J-STD-609 Code
    e1
  • Memory IC Type
    CACHE DRAM MODULE
  • Refresh Cycles
    8192
  • Terminal Finish
    TIN SILVER COPPER
  • DLA Qualification
    Not Qualified
  • Terminal Position
    BOTTOM
  • Memory Organization
    64MX16
  • Number of Terminals
    100
  • Terminal Pitch (mm)
    0.8
  • Access Time-Max (ns)
    0.3
  • Number of Words Code
    64M
  • Memory Density (bits)
    1073741824
  • Package Body Material
    PLASTIC/EPOXY
  • Output Characteristics
    3-STATE
  • Supply Voltage-Nom (V)
    1.5
  • Number of Words (words)
    67108864
  • Sequential Burst Length
    8
  • Standby Current-Max (A)
    0.01
  • Supply Current-Max (mA)
    310
  • Interleaved Burst Length
    8
  • Package Equivalence Code
    BGA100,11X16,32
  • Clock Frequency-Max (MHz)
    533
  • Moisture Sensitivity Level
    3
  • Peak Reflow Temperature (Cel)
    260

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