Samsung Semiconductor, Inc. K4B1G1646C-ZCH9T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B1G1646C-ZCH9T

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM, 64MX16, 0.255ns, CMOS, PBGA112
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B112
Memory Width
16
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3 DRAM
Refresh Cycles
8192
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Memory Organization
64MX16
Number of Terminals
112
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.255
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Supply Voltage-Nom (V)
1.5
Number of Words (words)
67108864
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA112,11X22,32
Clock Frequency-Max (MHz)
667