Samsung Semiconductor, Inc. K4B1G1646C-ZCG80 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B1G1646C-ZCG80

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3 DRAM, 64MX16, 0.3ns, CMOS, PBGA112
类别
Semiconductors Memory ICs DRAMs DDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
Width (mm)
11
Access Mode
MULTI BANK PAGE BURST
Length (mm)
18
JESD-30 Code
R-PBGA-B112
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR3 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
DLA Qualification
Not Qualified
Temperature Grade
COMMERCIAL EXTENDED
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH
Memory Organization
64MX16
Number of Functions
1
Number of Terminals
112
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.3
Number of Words Code
64M
Memory Density (bits)
1073741824
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.575
Supply Voltage-Min (V)
1.452
Supply Voltage-Nom (V)
1.5
Number of Words (words)
67108864
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA112,11X22,32
Clock Frequency-Max (MHz)
533
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
0
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED