Samsung Semiconductor, Inc. K4B1G0846F-HYF8T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B1G0846F-HYF8T

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR3L DRAM, 128MX8, 0.3ns, CMOS, PBGA78
类别
Semiconductors Memory ICs DRAMs DDR3L DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B78
Memory Width
8
Organization
128MX8
Package Code
FBGA
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1073741824 bit
Memory IC Type
DDR3L DRAM
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
0.3 ns
Number of Words
134217728 words
Terminal Position
BOTTOM
Supply Current-Max
135 mA
Number of Terminals
78
Number of Words Code
128M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA78,9X13,32
Supply Voltage-Nom (Vsup)
1.35 V
Clock Frequency-Max (fCLK)
533 MHz
Peak Reflow Temperature (Cel)
260