Samsung Semiconductor, Inc. K4B1G0446D-HCF8T | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4B1G0446D-HCF8T

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
Cache DRAM Module, 256MX4, 0.3ns, CMOS, PBGA82
类别
Semiconductors Memory ICs DRAMs CACHE DRAM MODULE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.32
SB Code
8542.32.00.15

I/O Type
COMMON
Technology
CMOS
JESD-30 Code
R-PBGA-B82
Memory Width
4
Organization
256MX4
Package Code
FBGA
JESD-609 Code
e1
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
1073741824 bit
Memory IC Type
CACHE DRAM MODULE
Refresh Cycles
8192
Terminal Pitch
0.8 mm
Access Time-Max
0.3 ns
Number of Words
268435456 words
Terminal Finish
TIN SILVER COPPER
Terminal Position
BOTTOM
Supply Current-Max
260 mA
Number of Terminals
82
Number of Words Code
256M
Qualification Status
Not Qualified
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Sequential Burst Length
8
Interleaved Burst Length
8
Package Equivalence Code
BGA82,11X13,32
Supply Voltage-Nom (Vsup)
1.5 V
Clock Frequency-Max (fCLK)
533 MHz
Moisture Sensitivity Level
3
Peak Reflow Temperature (Cel)
260