Samsung Semiconductor, Inc. K4A4G165WE-BIPB0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4A4G165WE-BIPB0

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR4 DRAM, 256MX16, CMOS, PBGA96
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

I/O Type
COMMON
Technology
CMOS
Width (mm)
7.5
Access Mode
MULTI BANK PAGE BURST
Length (mm)
13.3
JESD-30 Code
R-PBGA-B96
Memory Width
16
Package Code
TFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Operating Mode
SYNCHRONOUS
Refresh Cycles
8192
Number of Ports
1
Terminal Position
BOTTOM
Memory Organization
256MX16
Number of Functions
1
Number of Terminals
96
Terminal Pitch (mm)
0.8
Access Time-Max (ns)
0.18
Number of Words Code
256M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Output Characteristics
3-STATE
Seated Height-Max (mm)
1.2
Supply Voltage-Max (V)
1.26
Supply Voltage-Min (V)
1.14
Supply Voltage-Nom (V)
1.2
Number of Words (words)
268435456
Sequential Burst Length
4,8
Standby Current-Max (A)
1.0E-5
Supply Current-Max (mA)
122
Interleaved Burst Length
4,8
Package Equivalence Code
BGA96,9X16,32
Clock Frequency-Max (MHz)
1067
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40