Samsung Semiconductor, Inc. K4A4G085WE-BITD | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K4A4G085WE-BITD

生命周期状态
Discontinued
RoHS
符合RoHS标准
REACH
REACH compliant
说明
DDR4 DRAM, 512MX8, CMOS
类别
Semiconductors Memory ICs DRAMs DDR4 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
JESD-30 Code
R-PBGA-B78
Memory Width
8
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
DDR4 DRAM
Number of Ports
1
Temperature Grade
INDUSTRIAL
Terminal Position
BOTTOM
Memory Organization
512MX8
Number of Functions
1
Number of Terminals
78
Number of Words Code
512M
Memory Density (bits)
4294967296
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Nom (V)
1.2
Number of Words (words)
536870912
Operating Temperature-Max (Cel)
95
Operating Temperature-Min (Cel)
-40