SAMSUNG ELECTRO-MECHANICS K3UH7H70AM-AGCL0 | 搜芯易Sourcengine

SAMSUNG ELECTRO-MECHANICS K3UH7H70AM-AGCL0

生命周期状态
Active
说明
LPDDR4X DRAM, 1GX64, CMOS
类别
Semiconductors Memory ICs DRAMs LPDDR4X DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Technology
CMOS
JESD-30 Code
R-PBGA-B556
Memory Width
64
Package Shape
RECTANGULAR
Surface Mount
YES
Terminal Form
BALL
Memory IC Type
LPDDR4X DRAM
Number of Ports
1
Temperature Grade
OTHER
Terminal Position
BOTTOM
Memory Organization
1GX64
Number of Functions
1
Number of Terminals
556
Number of Words Code
1G
Memory Density (bits)
68719476736
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Nom (V)
1.8
Number of Words (words)
1073741824
Operating Temperature-Max (Cel)
85
Operating Temperature-Min (Cel)
-25