K3RG2G20BM-AGCH0
Samsung Semiconductor, Inc.
- 生命周期状态Active-Unconfirmed
- REACHREACH compliant
- 说明DDR4 DRAM, 512MX64, CMOS, PBGA272
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8542.32.00.36
- SB Code8542.32.00.23
- TechnologyCMOS
- JESD-30 CodeR-PBGA-B272
- Memory Width64
- Organization512MX64
- Package CodeBGA
- Package ShapeRECTANGULAR
- Package StyleGRID ARRAY Meter
- Surface MountYES
- Terminal FormBALL
- Memory Density34359738368 bit
- Memory IC TypeDDR4 DRAM
- Operating ModeASYNCHRONOUS
- Number of Ports1
- Number of Words536870912 words
- Temperature GradeOTHER
- Terminal PositionBOTTOM
- Number of Functions1
- Number of Terminals272
- Number of Words Code512M
- Package Body MaterialPLASTIC/EPOXY
- Operating Temperature-Max85 Cel
- Operating Temperature-Min-25 Cel
- Supply Voltage-Nom (Vsup)1.8 V
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K3RG2G20BM-AGCH0