Samsung Semiconductor, Inc. K3QF1F10EM-AGCF0 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K3QF1F10EM-AGCF0

生命周期状态
Discontinued
REACH
REACH compliant
说明
LPDDR3 DRAM, 128MX32, CMOS, PBGA253
类别
Semiconductors Memory ICs DRAMs LPDDR3 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
11 mm
Length
11.5 mm
Technology
CMOS
Access Mode
MULTI BANK PAGE BURST
JESD-30 Code
R-PBGA-B253
Memory Width
32
Organization
128MX32
Package Code
VFBGA
Self Refresh
YES
Package Shape
RECTANGULAR
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
4294967296 bit
Memory IC Type
LPDDR3 DRAM
Operating Mode
SYNCHRONOUS
Terminal Pitch
0.5 mm
Number of Ports
2
Number of Words
134217728 words
Seated Height-Max
0.9 mm
Terminal Position
BOTTOM
Additional Feature
AUTO/SELF REFRESH; IT ALSO REQUIRES 1.8V NOM
Number of Functions
1
Number of Terminals
253
Number of Words Code
128M
Package Body Material
PLASTIC/EPOXY
Supply Voltage-Max (Vsup)
1.3 V
Supply Voltage-Min (Vsup)
1.14 V
Supply Voltage-Nom (Vsup)
1.2 V