Samsung Semiconductor, Inc. K3PE7E700D-XGC1 | 搜芯易Sourcengine

Samsung Semiconductor, Inc. K3PE7E700D-XGC1

生命周期状态
Active-Unconfirmed
RoHS
符合RoHS标准
REACH
REACH compliant
说明
LPDDR2 DRAM, 128MX32, CMOS, PBGA220
类别
Semiconductors Memory ICs DRAMs LPDDR2 DRAM

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8542.32.00.36
SB Code
8542.32.00.23

Width
14 mm
Length
14 mm
Technology
CMOS
JESD-30 Code
S-PBGA-B220
Memory Width
32
Organization
128MX32
Package Code
VFBGA
Package Shape
SQUARE
Package Style
GRID ARRAY, VERY THIN PROFILE, FINE PITCH Meter
Surface Mount
YES
Terminal Form
BALL
Memory Density
8589934592 bit
Memory IC Type
LPDDR2 DRAM
Operating Mode
SYNCHRONOUS
Number of Ports
1
Number of Words
134217728 words
Terminal Position
BOTTOM
Number of Functions
1
Number of Terminals
220
Number of Words Code
128M
Package Body Material
PLASTIC/EPOXY
Package Equivalence Code
BGA220,27X27,20
Supply Voltage-Nom (Vsup)
1.2 V