JS8853-AS
Toshiba Corporation
- 生命周期状态Discontinued
- 说明RF Small Signal Field-Effect Transistor, KU Band, Gallium Arsenide, Junction FET
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationAMPLIFIER
- FET TechnologyJUNCTION
- J-STD-609 Codee0
- Operating ModeDEPLETION MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Number of Terminals6
- Highest Frequency BandKU BAND
- Drain Current-Max (ID) (A)0.65
- Transistor Element MaterialGALLIUM ARSENIDE
- DS Breakdown Voltage-Min (V)15
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