Toshiba Corporation JDV3S25CT | 搜芯易Sourcengine

Toshiba Corporation JDV3S25CT

生命周期状态
Discontinued
说明
Variable Capacitance Diode, Ultra High Frequency, 5.81pF C(T), 10V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-XBCC-N3
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
Frequency Band
ULTRA HIGH FREQUENCY
Case Connection
CATHODE
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Diode Element Material
SILICON
Diode Cap Tolerance (%)
3.19
Breakdown Voltage-Min (V)
10
Diode Capacitance-Nom (pF)
5.81
Diode Capacitance Ratio-Min
2.77
Rep Pk Reverse Voltage-Max (V)
10
Operating Temperature-Max (Cel)
150
Variable Capacitance Diode Classification
ABRUPT