Toshiba Corporation JDV2S36E(TH3APN,F) | 搜芯易Sourcengine

Toshiba Corporation JDV2S36E(TH3APN,F)

生命周期状态
Discontinued
说明
Variable Capacitance Diode, Very High Frequency, 46.75pF C(T), 10V, Silicon, Abrupt
类别
Semiconductors Diodes Varactors VARIABLE CAPACITANCE DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.80
SB Code
8541.10.00.80

Diode Type
VARIABLE CAPACITANCE DIODE
JESD-30 Code
R-PDSO-F2
Configuration
SINGLE
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Frequency Band
VERY HIGH FREQUENCY
Terminal Position
DUAL
Number of Elements
1
Diode Cap Tolerance
5.88 %
Number of Terminals
2
Breakdown Voltage-Min
10 V
Diode Capacitance-Nom
46.75 pF
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Operating Temperature-Max
125 Cel
Diode Capacitance Ratio-Min
6.3
Variable Capacitance Diode Classification
ABRUPT