Toshiba Corporation JDS2S03S | 搜芯易Sourcengine

Toshiba Corporation JDS2S03S

生命周期状态
Discontinued
说明
Mixer Diode, Very High Frequency, Silicon
类别
Semiconductors Diodes Microwave Mixer Diodes MIXER DIODE

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.10.00.60
SB Code
8541.10.00.60

Diode Type
MIXER DIODE
JESD-30 Code
R-PDSO-F2
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE Meter
Surface Mount
YES
Terminal Form
FLAT
Frequency Band
VERY HIGH FREQUENCY
Terminal Finish
TIN LEAD
Terminal Position
DUAL
Number of Elements
1
Output Current-Max
0.1 A
Number of Terminals
2
Qualification Status
Not Qualified
Diode Capacitance-Max
1.2 pF
Package Body Material
PLASTIC/EPOXY
Diode Element Material
SILICON
Forward Voltage-Max (VF)
0.85 V
Operating Temperature-Max
150 Cel
Rep Pk Reverse Voltage-Max
30 V