Intersil Corporation JANTXVR2N7294 | 搜芯易Sourcengine

Intersil Corporation JANTXVR2N7294

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 23A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE
JESD-609 Code
e0
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
TIN LEAD
Terminal Position
SINGLE
Additional Feature
RADIATION HARDENED
Number of Elements
1
Reference Standard
MIL-19500/605B
Number of Terminals
3
Qualification Status
Not Qualified
Package Body Material
UNSPECIFIED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
23 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
200 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
125 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
238 mJ
Pulsed Drain Current-Max (IDM)
69 A