Intersil Corporation JANTXVR2N7275 | 搜芯易Sourcengine

Intersil Corporation JANTXVR2N7275

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 5A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID) (A)
5
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Avalanche Energy Rating (Eas) (mJ)
11
Pulsed Drain Current-Max (IDM) (A)
15
Screening Level / Reference Standard
MIL-19500/604B