INFINEON TECHNOLOGIES AG JANTXVF2N7426 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG JANTXVF2N7426

生命周期状态
Active
RoHS
符合RoHS标准
说明
Power Field-Effect Transistor, 27A I(D), 200V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
EAR99
ECCN Governance
EAR

JESD-30 Code
S-XSFM-P3
Configuration
SINGLE
JEDEC-95 Code
TO-254AA
Package Shape
SQUARE
Package Style
FLANGE MOUNT Meter
Surface Mount
NO
Terminal Form
PIN/PEG
FET Technology
METAL-OXIDE SEMICONDUCTOR
J-STD-609 Code
e0
Operating Mode
ENHANCEMENT MODE
Case Connection
ISOLATED
Terminal Finish
Tin/Lead (Sn/Pb)
DLA Qualification
Qualified
Terminal Position
SINGLE
Additional Feature
RADIATION HARDENED
Number of Elements
1
Number of Terminals
3
Package Body Material
UNSPECIFIED
Polarity/Channel Type
P-CHANNEL
Power Dissipation-Max (W)
3
Drain Current-Max (ID) (A)
27
Transistor Element Material
SILICON
DS Breakdown Voltage-Min (V)
200
Operating Temperature-Max (Cel)
150
Avalanche Energy Rating (Eas) (mJ)
500
Pulsed Drain Current-Max (IDM) (A)
108
Screening Level / Reference Standard
MIL-19500/660A