JANTXV2N6661
VPT COMPONENTS
- 生命周期状态Active
- 说明Small Signal Field-Effect Transistor, 0.86A I(D), 90V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-205AD
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- HTS Code8541.21.00.95
- SB Code8541.21.00.80
- ApplicationSWITCHING
- JESD-30 CodeO-MBCY-W3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-205AD
- Package ShapeROUND
- Package StyleCYLINDRICAL Meter
- Surface MountNO
- Terminal FormWIRE
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- DLA QualificationQualified
- Terminal PositionBOTTOM
- Number of Elements1
- Number of Terminals3
- Package Body MaterialMETAL
- Polarity/Channel TypeN-CHANNEL
- Power Dissipation-Max (W)6.25
- Drain Current-Max (ID) (A)0.86
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)90
- Feedback Cap-Max (Crss) (pF)10
- Operating Temperature-Max (Cel)150
- Operating Temperature-Min (Cel)-65
- Power Dissipation Ambient-Max (W)0.725
- Drain-source On Resistance-Max (ohm)4
- Screening Level / Reference StandardMIL-19500
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JANTXV2N6661