Motorola,Inc. JANTXV2N6603 | 搜芯易Sourcengine

Motorola,Inc. JANTXV2N6603

生命周期状态
Discontinued
说明
RF Small Signal Bipolar Transistor, 0.03A I(C), 1-Element, L Band, Silicon, NPN
类别
Semiconductors Transistors RF Small Signal Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.21.00.75
SB Code
8541.21.00.80

Application
AMPLIFIER
JESD-30 Code
O-CRDB-F4
Configuration
SINGLE
Package Shape
ROUND
Package Style
DISK BUTTON Meter
Surface Mount
YES
Terminal Form
FLAT
DLA Qualification
Not Qualified
Terminal Position
RADIAL
Additional Feature
LOW NOISE
Number of Elements
1
Number of Terminals
4
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
NPN
Highest Frequency Band
L BAND
Power Gain-Min (Gp) (dB)
15
DC Current Gain-Min (hFE)
30
Transistor Element Material
SILICON
Collector Current-Max (IC) (A)
0.03
Collector-emitter Voltage-Max (V)
15
Power Dissipation Ambient-Max (W)
0.4
Collector-base Capacitance-Max (pF)
0.75
Screening Level / Reference Standard
MILITARY STANDARD (USA)