Microsemi Corporation JANTXV2N5666 | 搜芯易Sourcengine

Microsemi Corporation JANTXV2N5666

生命周期状态
Transferred
说明
Power Bipolar Transistor, 5A I(C), 200V V(BR)CEO, 1-Element, NPN, Silicon, TO-5, Metal, 3 Pin
类别
Semiconductors Transistors Power Bipolar Transistors

ECCN
EAR99
ECCN Governance
EAR
HTS Code
8541.29.00.95
SB Code
8541.29.00.80

Application
SWITCHING
JESD-30 Code
O-MBCY-W3
Configuration
SINGLE
JEDEC-95 Code
TO-5
Package Shape
ROUND
Package Style
CYLINDRICAL Meter
Surface Mount
NO
Terminal Form
WIRE
J-STD-609 Code
e0
VCEsat-Max (V)
0.4
Terminal Finish
TIN LEAD
DLA Qualification
Not Qualified
Terminal Position
BOTTOM
Number of Elements
1
Number of Terminals
3
Package Body Material
METAL
Polarity/Channel Type
NPN
DC Current Gain-Min (hFE)
15
Power Dissipation-Max (W)
2.5
Transistor Element Material
SILICON
Turn-on Time-Max (ton) (ns)
250
Turn-off Time-Max (toff) (ns)
1500
Collector Current-Max (IC) (A)
5
Operating Temperature-Max (Cel)
200
Operating Temperature-Min (Cel)
-65
Collector-emitter Voltage-Max (V)
200
Power Dissipation Ambient-Max (W)
2.5
Collector-base Capacitance-Max (pF)
120
Screening Level / Reference Standard
MIL-PRF-19500