JANSR2N7423
International Rectifier Corporation
- 生命周期状态Transferred
- REACHREACH compliant
- 说明Power Field-Effect Transistor, 14A I(D), 200V, 0.33ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-254AA
- 类别
- ECCNEAR99
- ECCN GovernanceEAR
- ApplicationSWITCHING
- JESD-30 CodeS-CSFM-P3
- ConfigurationSINGLE WITH BUILT-IN DIODE
- JEDEC-95 CodeTO-254AA
- Package ShapeSQUARE
- Package StyleFLANGE MOUNT Meter
- Surface MountNO
- Terminal FormPIN/PEG
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- J-STD-609 Codee0
- Operating ModeENHANCEMENT MODE
- Terminal FinishTIN LEAD
- DLA QualificationNot Qualified
- Terminal PositionSINGLE
- Additional FeatureAVALANCHE RATED
- Number of Elements1
- Number of Terminals3
- Package Body MaterialCERAMIC, METAL-SEALED COFIRED
- Polarity/Channel TypeP-CHANNEL
- Drain Current-Max (ID) (A)14
- Transistor Element MaterialSILICON
- DS Breakdown Voltage-Min (V)200
- Avalanche Energy Rating (Eas) (mJ)500
- Pulsed Drain Current-Max (IDM) (A)56
- Drain-source On Resistance-Max (ohm)0.33
- Screening Level / Reference StandardMIL-19500/662
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JANSR2N7423