INFINEON TECHNOLOGIES AG JANSH2N7469U2 | 搜芯易Sourcengine

INFINEON TECHNOLOGIES AG JANSH2N7469U2

生命周期状态
Discontinued
说明
Power Field-Effect Transistor, 75A I(D), 100V, 0.012ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
类别
Semiconductors Transistors Power Field-Effect Transistors

ECCN
3A001.A.1.A
ECCN Governance
EAR

JESD-30 Code
R-CBCC-N3
Configuration
SINGLE WITH BUILT-IN DIODE
JESD-609 Code
e0
Package Shape
RECTANGULAR
Package Style
CHIP CARRIER Meter
Surface Mount
YES
Terminal Form
NO LEAD
FET Technology
METAL-OXIDE SEMICONDUCTOR
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Terminal Finish
TIN LEAD
Terminal Position
BOTTOM
Number of Elements
1
Reference Standard
MIL-19500/673
Number of Terminals
3
Qualification Status
Qualified
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Polarity/Channel Type
N-CHANNEL
Drain Current-Max (ID)
75 A
Transistor Application
SWITCHING
DS Breakdown Voltage-Min
100 V
Operating Temperature-Max
150 Cel
Power Dissipation-Max (Abs)
250 W
Transistor Element Material
SILICON
Avalanche Energy Rating (Eas)
363 mJ
Drain-source On Resistance-Max
0.012 ohm
Pulsed Drain Current-Max (IDM)
300 A